AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms-Reference-Cited by-同舟云学术

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AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms

Published:2021 Issue:20 Volume:11 Page:12235-12248
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Miao Mengmeng¹²³⁴^ORCID,Cadien Ken¹²³⁴

Affiliation:

1. Chemical and Materials Engineering

2. University of Alberta

3. Edmonton

4. Canada

Abstract

Plasma effect on PEALD AIN growth rate follows a similar trend but shifts to longer plasma dose time when deposition temperature decreases.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/RA/D0RA05134A

Reference57 articles.

1. Highly Efficient Deep-UV Light-Emitting Diodes Using AlN-Based Deep-UV-Transparent Glass Electrodes

2. Electrical characteristics of insulating aluminum nitride MIS nanostructures

3. High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition

4. Ror2 signaling regulates Golgi structure and transport through IFT20 for tumor invasiveness

5. AlN films deposited by dc magnetron sputtering and high power impulse magnetron sputtering for SAW applications

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of atomic layer annealing in plasma-enhanced atomic layer deposition of aluminum nitride on silicon;Journal of Vacuum Science & Technology A;2023-07-19

2. Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition;Nanomaterials;2021-12-07

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