Correlation-driven topological phase transition in 2D valleytronic materials: a mini-review-Reference-Cited by-同舟云学术

Correlation-driven topological phase transition in 2D valleytronic materials: a mini-review

Published:2023 Issue:28 Volume:25 Page:18577-18583
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Guo Xiao-Shu¹,Guo San-Dong¹^ORCID

Affiliation:

1. School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, China

Abstract

The ferrovalley semiconductors (FVS) to half-valley-metal (HVM) to valley-polarized quantum anomalous Hall insulator (VQAHI) to HVM to FVS transitions can be driven by increasing electron correlation U in some special 2D valleytronic materials.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CP/D3CP01368E

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2. Control of valley polarization in monolayer MoS2 by optical helicity

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