Ab initio study of strained wurtzite InAs nanowires: engineering an indirect–direct band gap transition through size and uniaxial strain-Reference-Cited by-同舟云学术

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Ab initio study of strained wurtzite InAs nanowires: engineering an indirect–direct band gap transition through size and uniaxial strain

Published:2015 Issue:109 Volume:5 Page:89993-90000
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Dabhi Shweta D.¹²³⁴,Jha Prafulla K.¹⁵⁶⁷⁴

Affiliation:

1. Department of Physics

2. Maharaja Krishnakumarsinhji Bhavnagar University

3. Bhavnagar-364 001

4. India

5. Faculty of Science

6. The M. S. University of Baroda

7. Vadodara-390 002

Abstract

Size and strain dependent electronic properties of wurtzite InAs nanowires are investigated using density functional theory.

Funder

Science and Engineering Research Board

Department of Science and Technology, Ministry of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/RA/C5RA16512A

Reference53 articles.

1. Catalyst-Free Heteroepitaxial MOCVD Growth of InAs Nanowires on Si Substrates

2. Effect of Diameter Variation on Electrical Characteristics of Schottky Barrier Indium Arsenide Nanowire Field-Effect Transistors

3. Indium arsenide nanowire field-effect transistors for pH and biological sensing

4. Defect-free InP nanowires grown in [001] direction on InP (001)

5. Structural properties of narrow hexagonal MnAs nanowires: Role of edge atoms

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