Catalyst-Free Heteroepitaxial MOCVD Growth of InAs Nanowires on Si Substrates-Reference-Cited by-同舟云学术

Catalyst-Free Heteroepitaxial MOCVD Growth of InAs Nanowires on Si Substrates

Published:2014-01-13 Issue:3 Volume:118 Page:1696-1705
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Jing Yi,Bao Xinyu,Wei Wei,Li Chun¹,Sun Ke,Aplin David P. R.,Ding Yong²,Wang Zhong-Lin²,Bando Yoshio¹,Wang Deli

Affiliation:

1. International Center for Materials Nanoarchitectonics (MANA), National Institute for Material Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan

2. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, United States

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp406428z

Reference56 articles.

1. Nanowire-based one-dimensional electronics

2. Nanowire electronic and optoelectronic devices

3. Nanowire photonics

4. Nanometer-Scale Thermoelectric Materials

5. Position-Controlled III–V Compound Semiconductor Nanowire Solar Cells by Selective-Area Metal–Organic Vapor Phase Epitaxy

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