Tunneling-current-induced local excitonic luminescence in p-doped WSe2 monolayers-Reference-Cited by-同舟云学术

Tunneling-current-induced local excitonic luminescence in p-doped WSe2 monolayers

Published:2020 Issue:25 Volume:12 Page:13460-13470
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Peña Román Ricardo Javier¹²³⁴⁵^ORCID,Auad Yves¹²³⁴⁵^ORCID,Grasso Lucas¹²³⁴⁵^ORCID,Alvarez Fernando¹²³⁴⁵^ORCID,Barcelos Ingrid David⁶⁷⁴⁵^ORCID,Zagonel Luiz Fernando¹²³⁴⁵^ORCID

Affiliation:

1. Applied Physics Department

2. “Gleb Wataghin” Institute of Physics

3. University of Campinas – UNICAMP

4. Campinas

5. Brazil

6. Brazilian Synchrotron Light Laboratory (LNLS)

7. Brazilian Center for Research in Energy and Materials (CNPEM)

Abstract

Probing and controlling excitonic species in a 2D-semiconductor on a metallic support using tunneling electrons as a nanoscale excitation source.

Funder

Fundação de Amparo à Pesquisa do Estado de São Paulo

Laboratório Nacional de Luz Síncrotron

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR03400B

Reference89 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Two-dimensional material nanophotonics

3. Near-unity photoluminescence quantum yield in MoS2

4. Scanning Tunneling Microscope-Induced Excitonic Luminescence of a Two-Dimensional Semiconductor

5. Optical and Electronic Properties of Two-Dimensional Layered Materials

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