Imaging Valley Excitons in a 2D Semiconductor with Scanning Tunneling Microscope-Induced Luminescence-Reference-Cited by-同舟云学术

Imaging Valley Excitons in a 2D Semiconductor with Scanning Tunneling Microscope-Induced Luminescence

Published:2024-03-12 Issue:12 Volume:18 Page:8961-8970
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Geng Hairui¹,Tang Jie¹,Wu Yanwei¹,Yu Yuanqin¹^ORCID,Guest Jeffrey R.²^ORCID,Zhang Rui¹^ORCID

Affiliation:

1. Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Optoelectronic Information Acquisition and Manipulation, Ministry of Education, School of Physics and Optoelectronics Engineering, Anhui University, Hefei Anhui 230601, China

2. Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, United States

Funder

Anhui Provincial Department of Human Resources and Social Security

Anhui University

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.3c12555

Reference60 articles.

1. Valleytronics in 2D materials

2. Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions

3. Light-emitting diodes by band-structure engineering in van der Waals heterostructures

4. 2D materials for quantum information science

5. Electroluminescent Devices Based on 2D Semiconducting Transition Metal Dichalcogenides

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1. Correction to “Imaging Valley Excitons in a 2D Semiconductor with Scanning Tunneling Microscope-Induced Luminescence”;ACS Nano;2024-05-01