Modification of electronic properties of top-gated graphene devices by ultrathin yttrium-oxide dielectric layers-Reference-Cited by-同舟云学术

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Modification of electronic properties of top-gated graphene devices by ultrathin yttrium-oxide dielectric layers

Published:2013 Issue:3 Volume:5 Page:1116-1120
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Wang Lin,Chen Xiaolong,Wang Yang,Wu Zefei,Li Wei,Han Yu,Zhang Mingwei,He Yuheng,Zhu Chao,Fung Kwok Kwong,Wang Ning

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2013/NR/C2NR33434H

Reference32 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Experimental observation of the quantum Hall effect and Berry's phase in graphene

3. Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

4. Electron transport in disordered graphene

5. Ultrahigh electron mobility in suspended graphene

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1. Enhanced electrical performance in graphene field-effect transistors through post-annealing of high-k HfLaO gate dielectrics;APL Materials;2024-08-01

2. Carbon nanotube network film-based field-effect transistor interface state optimization by ambient air annealing;Journal of Applied Physics;2023-03-23

3. Low temperature solution processed high-κ zirconium oxide gate insulator by Broadband-UV annealing;Organic Electronics;2018-06

4. Decreasing graphene synthesis temperature by catalytic metal engineering and thermal processing;RSC Advances;2018

5. Reducing graphene device variability with yttrium sacrificial layers;Applied Physics Letters;2017-05-29

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