Effect of high-temperature remelting on the properties of Sn-doped β-Ga<sub>2</sub>O<sub>3</sub> crystal grown using the EFG method-Reference-Cited by-同舟云学术

Effect of high-temperature remelting on the properties of Sn-doped β-Ga₂O₃ crystal grown using the EFG method

Published:2023 Issue:30 Volume:25 Page:4317-4324
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Wei Jinshan¹²³^ORCID,Bu Yuzhe⁴^ORCID,Sai Qinglin⁴^ORCID,Qi Hongji⁴³,Li Jingbo¹²,Gu Huaimin¹²^ORCID

Affiliation:

1. School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P.R. China

2. Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, P.R. China

3. Hangzhou Institute of Optics and Fine Mechanics, Hangzhou 311421, P. R. China

4. Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

Abstract

We compared the crystal properties of the blue area grown before high-temperature remelting and the colorless area after high-temperature remelting through characterization tests, such as AFM, XRD, PL, ICP, LCM, and HALL.

Funder

Youth Innovation Promotion Association of the Chinese Academy of Sciences

National Science and Technology Major Project

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CE/D3CE00415E

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