Origin of the temperature dependence of the energy gap in Cr-doped Bi2Se3-Reference-Cited by-同舟云学术

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Origin of the temperature dependence of the energy gap in Cr-doped Bi2Se3

Published:2018 Issue:13 Volume:20 Page:8624-8628
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Yilmaz Turgut¹²³⁴⁵^ORCID,Hines William¹²³,Alraddadi Shoroog⁶⁷⁸,Budnick Joseph I.¹²³,Sinkovic Boris¹²³

Affiliation:

1. Department of Physics, University of Connecticut

2. Storrs

3. USA

4. Department of Physics, Science and Literature Faculty, Uludag University

5. Bursa 16059

6. Department of Physics, Umm Al-Qura University

7. Makkah 24382

8. Kingdom of Saudi Arabia

Abstract

Recent progress in impurity-doped topological insulators has shown that the gap at the Dirac point shrinks with reducing temperature.

Funder

University of Connecticut

Laboratory Directed Research and Development

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CP/C7CP08049B

Reference43 articles.

1. Quantum Spin Hall Effect in Graphene

2. Quantum Spin Hall Effect

3. Topological invariants of time-reversal-invariant band structures

4. Topological Insulators in Three Dimensions

5. Phase transition between the quantum spin Hall and insulator phases in 3D: emergence of a topological gapless phase

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Doping of n-type Bi2Se3 single crystal with Fe, Ru, Os, and Mo;Journal of Physics and Chemistry of Solids;2024-02

2. Antibonding-Induced Anomalous Temperature Dependence of the Band Gap in Crystalline Ge2Sb2Te5;The Journal of Physical Chemistry C;2021-08-25

3. AC magnetoresistance and its frequency-dependence of Fe-doped Bi2Se3 topological insulator;Modern Physics Letters B;2020-06-16

4. Topological Surface State of Bi 2 Se 3 Modified by Adsorption of Organic Donor Molecule Tetrathianaphthacene;Advanced Materials Interfaces;2020-06

5. Photon energy and polarization-dependent electronic structure of Cr-doped Bi2Se3;Physical Review Materials;2020-02-05

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