AC magnetoresistance and its frequency-dependence of Fe-doped Bi2Se3 topological insulator

Author:

Liu Qiya1,Zhao Ke1ORCID,Yang Xinsheng2,Zhao Yong2

Affiliation:

1. School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031, China

2. Key Laboratory of Advanced Technology of Materials (Ministry of Education), Superconductivity and New Energy R&D Center, Mail Stop 165#, Southwest Jiaotong University, Chengdu 610031, China

Abstract

Bismuth selenide (Bi2Se3) is one of the most important base materials in the study of topological insulators. Doping with iron is a direct method to manipulate the magnetic order in Bi2Se3. In this paper, we first report the measurements of magnetoresistance of Fe-doped Bi2Se3 with alternating current. Unlike the DC magnetoresistance, skin effect plays an important role in AC magnetoresistance. Another interesting finding is that resonance occurs at a certain frequency, which implies an internal relaxation mechanism. The relations between resistance, magnetic field and current frequency are discussed.

Funder

National Magnetic Confinement Fusion Science Program

Program of International S&T Cooperation

National Nature Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

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