Local defect-induced red-shift of cathodoluminescence in individual ZnS nanobelts-Reference-Cited by-同舟云学术

Local defect-induced red-shift of cathodoluminescence in individual ZnS nanobelts

Published:2014 Issue:21 Volume:6 Page:12414-12420
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Liu B. D.¹²³⁴,Yang B.¹²³⁴,Dierre B.⁵⁶⁷,Sekiguchi T.⁵⁶⁷,Jiang X.¹²³⁴

Affiliation:

1. Shenyang National Laboratory for Materials Science

2. Institute of Metal Research (IMR)

3. Chinese Academy of Sciences (CAS)

4. Shenyang 110016, China

5. World Premier International (WPI) Center for Materials Nanoarchitectonics (MANA)

6. National Institute for Materials Science (NIMS)

7. Tsukuba, Japan

Abstract

Local defect-induced red-shift of cathodoluminescence in individual ZnS nanobelts has been observed using a high-resolution spatially-resolved CL technique. Structural defects such as strip stacking faults and the heterostructure area with a size of 10–20 nm are responsible for luminescence difference.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2014/NR/C4NR04464A

Reference31 articles.

1. Single-Crystalline ZnS Nanobelts as Ultraviolet-Light Sensors

2. ZnS Branched Architectures as Optoelectronic Devices and Field Emitters

3. Ultrafine ZnS Nanobelts as Field Emitters

4. A Novel Ethanol Gas Sensor–ZnS/Cyclohexylamine Hybrid Nanowires

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