InSe: a two-dimensional semiconductor with superior flexibility-Reference-Cited by-同舟云学术

InSe: a two-dimensional semiconductor with superior flexibility

Published:2019 Issue:20 Volume:11 Page:9845-9850
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Zhao Qinghua¹²³⁴⁵,Frisenda Riccardo⁶⁷⁸^ORCID,Wang Tao¹²³⁴⁵^ORCID,Castellanos-Gomez Andres⁶⁷⁸^ORCID

Affiliation:

1. State Key Laboratory of Solidification Processing

2. Northwestern Polytechnical University

3. Xi'an

4. P. R. China

5. Key Laboratory of Radiation Detection Materials and Devices

6. Materials Science Factory. Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC)

7. Madrid

8. Spain

Abstract

The Young's modulus of thin InSe flakes was determined experimentally to be 23 GPa, one of the lowest values reported to date for a crystalline two-dimensional material.

Funder

H2020 European Research Council

Ministerio de Economía y Competitividad

China Scholarship Council

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NR/C9NR02172H

Reference53 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

3. Electronic structure, optical properties, and lattice dynamics in atomically thin indium selenide flakes

4. 2D transition metal dichalcogenides

5. Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene

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