Enhanced device performances of WSe2–MoS2 van der Waals junction p–n diode by fluoropolymer encapsulation-Reference-Cited by-同舟云学术

Enhanced device performances of WSe2–MoS2 van der Waals junction p–n diode by fluoropolymer encapsulation

Published:2015 Issue:12 Volume:3 Page:2751-2758
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Jeon Pyo Jin¹²³⁴,Min Sung-Wook¹²³⁴,Kim Jin Sung¹²³⁴,Raza Syed Raza Ali¹²³⁴,Choi Kyunghee¹²³⁴,Lee Hee Sung¹²³⁴,Lee Young Tack⁵⁶⁷⁸⁴,Hwang Do Kyung⁵⁶⁷⁸⁴,Choi Hyoung Joon¹²³⁴,Im Seongil¹²³⁴

Affiliation:

1. Institute of Physics and Applied Physics

2. Yonsei University

3. Seoul 120-749

4. Korea

5. Interface Control Research Center

6. Future Convergence Research Technology Division

7. Korea Institute of Science and Technology (KIST)

8. Seoul 136-791

Abstract

Superior electrostatic and dynamic performances were acquired from the diode on glass when a dipole-containing fluoropolymer was employed for encapsulation.

Funder

Korea Institute of Science and Technology

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C4TC02961E

Reference40 articles.

1. Graphene: Status and Prospects

2. Two-dimensional atomic crystals