Recent progress on kinetic control of chemical vapor deposition growth of high-quality wafer-scale transition metal dichalcogenides-Reference-Cited by-同舟云学术

Recent progress on kinetic control of chemical vapor deposition growth of high-quality wafer-scale transition metal dichalcogenides

Published:2021 Issue:12 Volume:3 Page:3430-3440
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Wang Qun¹²³⁴,Shi Run¹²³⁴⁵,Zhao Yaxuan¹²³⁴,Huang Runqing¹²³⁴,Wang Zixu¹²³⁴,Amini Abbas⁶⁷⁸⁹,Cheng Chun¹²³⁴^ORCID

Affiliation:

1. Department of Materials Science and Engineering

2. Southern University of Science and Technology

3. Shenzhen 518055

4. People's Republic of China

5. Department of Physics and Center for Quantum Materials

6. Center for Infrastructure Engineering

7. Western Sydney University

8. Kingswood

9. Australia

Abstract

Wafer-scale TMD films are fabricated via CVD method, controlling precursor concentration, nucleation density and orientated growth. Precursor concentration is important for the ideal film. Nucleation and orientated growth allow large domain size or single crystalline TMDs.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NA/D1NA00171J

Reference68 articles.

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3. Controlled Synthesis of Highly Crystalline MoS2 Flakes by Chemical Vapor Deposition