Enhanced thermoelectric performance of GeTe through in situ microdomain and Ge-vacancy control-Reference-Cited by-同舟云学术

Enhanced thermoelectric performance of GeTe through in situ microdomain and Ge-vacancy control

Published:2019 Issue:25 Volume:7 Page:15181-15189
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Bayikadi Khasim Saheb¹²³⁴,Sankar Raman¹²³⁴⁵^ORCID,Wu Chien Ting⁶⁷⁴,Xia Chengliang⁸⁹¹⁰,Chen Yue⁸⁹¹⁰^ORCID,Chen Li-Chyong⁵¹¹¹²¹³¹⁴,Chen Kuei-Hsien⁵¹¹¹²¹³¹⁵^ORCID,Chou Fang-Cheng⁵¹¹¹²¹³¹⁴^ORCID

Affiliation:

1. Institute of Physics

2. Academia Sinica

3. Taipei

4. R.O.C

5. Centre for Condensed Matter Sciences

6. Taiwan Semiconductor Research Institute

7. Hsinchu 300

8. Department of Mechanical Engineering

9. The University of Hong Kong

10. China

11. National Taiwan University

12. Taipei 10617

13. Taiwan

14. Center of Atomic Initiative for New Materials

15. Institute of Atomic and Molecular Sciences

Abstract

The thermoelectric figure-of-merit (ZT) for GeTe powder is able to be raised from ∼0.8 to 1.37 at high temperature near ∼500 °C by tuning the Ge vacancy level through a reversible in situ route.

Funder

Ministry of Science and Technology, Taiwan

National Taiwan University

Ministry of Education

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TA/C9TA03503F

Reference44 articles.

1. Germanium Chalcogenide Thermoelectrics: Electronic Structure Modulation and Low Lattice Thermal Conductivity