Band and vacancy engineering in SnTe to improve its thermoelectric performance-Reference-Cited by-同舟云学术

Band and vacancy engineering in SnTe to improve its thermoelectric performance

Published:2024 Issue:9 Volume:12 Page:5357-5365
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Yang Zan¹,Smith Evan²^ORCID,Tseng Yu-Chih³,Ciesielski Kamil⁴,Novikov Sergei¹,Kalab Thomas¹,Huang Yuyang¹,Toberer Eric⁴^ORCID,Mozharivskyj Yurij¹^ORCID

Affiliation:

1. Department of Chemistry and Chemical Biology, McMaster University, Hamilton L8S 4M1, Ontario, Canada

2. Department of Physics and Astronomy, McMaster University, Hamilton L8S 4M1, Ontario, Canada

3. CanmetMATERIALS, Natural Resources Canada, Hamilton L8P 0A5, Ontario, Canada

4. Physics Department, Colorado School of Mines, 1500 Illinois St, Golden, CO 80401, USA

Abstract

SnTe is a promising thermoelectric material with low cost and high stability.

Funder

Natural Sciences and Engineering Research Council of Canada

Canada Foundation for Innovation

McMaster University

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TA/D3TA07585K

Reference51 articles.

1. Giant anharmonic phonon scattering in PbTe

2. Intrinsic anharmonic localization in thermoelectric PbSe

3. Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals

4. Enhanced thermoelectric performance of GeTe through in situ microdomain and Ge-vacancy control

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