Engineering of charge carriers via a two-dimensional heterostructure to enhance the thermoelectric figure of merit-Reference-Cited by-同舟云学术

Engineering of charge carriers via a two-dimensional heterostructure to enhance the thermoelectric figure of merit

Published:2018 Issue:15 Volume:10 Page:7077-7084
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Ding Guangqian¹²³⁴⁵^ORCID,Wang Cong⁵⁶⁷⁴,Gao Guoying⁵⁶⁷⁴^ORCID,Yao Kailun⁵⁶⁷⁴,Dun Chaochao⁸⁹¹⁰¹¹,Feng Chunbao¹²³⁴,Li Dengfeng¹²³⁴,Zhang Gang¹²¹³¹⁴^ORCID

Affiliation:

1. School of Science

2. Chongqing University of Posts and Telecommunications

3. Chongqing

4. China

5. School of Physics and Wuhan National High Magnetic Field Center

6. Huazhong University of Science and Technology

7. Wuhan

8. Center for Nanotechnology and Molecular Materials Department of Physics

9. Wake Forest University

10. Winston-Salem

11. USA

12. Institute of High Performance Computing

13. A*STAR

14. Singapore

Abstract

Thermoelectric ZT of n-doped ZrSe₂/HfSe₂ SLM at room temperature.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/NR/C7NR09029C

Reference48 articles.

1. Increasing Thermoelectric Efficiency: A Dynamical Systems Approach

2. Maximizing the thermoelectric performance of topological insulator Bi2Te3films in the few-quintuple layer regime

3. Complex thermoelectric materials

4. A T-type method for characterization of the thermoelectric performance of an individual free-standing single crystal Bi2S3nanowire

5. Convergence of Conduction Bands as a Means of Enhancing Thermoelectric Performance ofn-TypeMg2Si1−xSnxSolid Solutions

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