Tunable magnetoelectric coupling and electrical features in an ultrathin Cr2Si2Te6/In2Se3 heterostructure-Reference-Cited by-同舟云学术

Tunable magnetoelectric coupling and electrical features in an ultrathin Cr₂Si₂Te₆/In₂Se₃ heterostructure

Published:2022 Issue:5 Volume:24 Page:3200-3206
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Ji Shilei¹,Fu Xin¹,Wang Yile¹,Li Xianzhi¹,Quan Chuye¹,Wu Hong¹,Li Xing’ao¹,Li Feng¹^ORCID,Pu Yong¹

Affiliation:

1. New Energy Technology Engineering Laboratory of Jiangsu Provence & School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing 210023, China

Abstract

A non-volatile magnetoelectric memory device has been prepared by first-principles calculations to achieve Ohmic contact-Schottky contact switching.

Funder

Natural Science Foundation of Jiangsu Province

National Natural Science Foundation of China

Nanjing University of Posts and Telecommunications

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CP/D1CP04233E

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5. Artificial Multiferroics and Enhanced Magnetoelectric Effect in van der Waals Heterostructures

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