Strong interfacial coupling effects of ferroelectric polarization with two-dimensional electron gas in BaTiO3/MgO/AlGaN/GaN/Si heterostructures-Reference-Cited by-同舟云学术

Strong interfacial coupling effects of ferroelectric polarization with two-dimensional electron gas in BaTiO3/MgO/AlGaN/GaN/Si heterostructures

Published:2019 Issue:19 Volume:7 Page:5677-5685
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Li Guanjie¹²³⁴⁵,Li Xiaomin¹²³⁴⁵^ORCID,Zhao Junliang⁶⁷⁵,Zhu Qiuxiang¹²³⁴⁵,Chen Yongbo¹²³⁴⁵

Affiliation:

1. State Key Laboratory of High Performance Ceramics and Superfine Microstructure

2. Shanghai Institute of Ceramics

3. Chinese Academy of Science

4. Shanghai

5. P. R. China

6. Nanjing NanoArc New Materials Technology Co., Ltd.

7. Nanjing

Abstract

Strong interfacial coupling between ferroelectric polarization and 2DEG is demonstrated in BTO/MgO/AlGaN/GaN/Si with a large threshold voltage for E-mode HEMT devices.

Funder

National Natural Science Foundation of China

State Key Laboratory of High Performance Ceramics and Superfine Microstructure

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C8TC05795H

Reference41 articles.

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4. Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate

5. High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

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