Bismuth-catalyzed and doped p-type ZnSe nanowires and their temperature-dependent charge transport properties-Reference-Cited by-同舟云学术

Bismuth-catalyzed and doped p-type ZnSe nanowires and their temperature-dependent charge transport properties

Published:2016 Issue:4 Volume:4 Page:857-862
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zhang Xiwei¹²³⁴⁵,Jie Jiansheng⁵⁶⁷⁸⁹,Zhang Xiujuan⁵⁶⁷⁸⁹,Yu Fengjun¹²³⁴

Affiliation:

1. College of physics and electrical engineering

2. Anyang Normal University

3. Anyang

4. P. R. China

5. Institute of Functional Nano & Soft Materials (FUNSOM)

6. Collaborative Innovation Center of Suzhou Nano Science and Technology

7. Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices

8. Soochow University

9. Suzhou

Abstract

Simultaneous ZnSe nanowire growth and p-type doping is realized in one step by using Bi as the catalyst and dopant via chemical vapor deposition. Temperature-dependent electrical measurements are used for understanding the charge transport mechanism and the doping effect.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TC/C5TC02853A

Reference39 articles.

1. ZnSe light‐emitting diodes

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