Solar-blind UV Schottky barrier photodetectors formed by Au/Ni on β-(Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>)<sub>2</sub>O<sub>3</sub>/AlGaN heterostructures-Reference-Cited by-同舟云学术

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Solar-blind UV Schottky barrier photodetectors formed by Au/Ni on β-(Al_xGa_1−x)₂O₃/AlGaN heterostructures

Published:2023 Issue:13 Volume:11 Page:4384-4392
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Chi Ping-Feng¹,Chang Wei-Che¹,Lee Ming-Lun²,Sheu Jinn-Kong¹^ORCID

Affiliation:

1. Department of Photonics, National Cheng Kung University, Tainan, Taiwan

2. Department of Electro-Optical Engineering, Southern Taiwan University of Science and Technology, Tainan City 71001, Taiwan

Abstract

Typical spectral responses of solar-blind photodetectors made of n-GaN/Al0.27Ga0.73N/(AlxGa1−x)2O3 heterostructures with Ni/Au Schottky contact.

Funder

Ministry of Science and Technology, Taiwan

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC00293D

Reference37 articles.

1. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

2. Ultraviolet/Visible Photodetectors Based on p–n NiO/ZnO Nanowires Decorated with Pd Nanoparticles

3. Investigation of nitrogen doping effects on light-induced oxygen vacancy ionization and oxygen desorption in c-IGO TFTs

4. Stability Improvement of Nitrogen Doping on IGO TFTs under Positive Gate Bias Stress and Hysteresis Test

5. The optimized growth of AlN templates for back-illuminated AlGaN-based solar-blind ultraviolet photodetectors by MOCVD

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3. High storage and operational stability self-powered UV photodetector based on p-CuI/n-GaN heterojunction prepared by thermal evaporation method;Applied Surface Science;2023-12

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