Epitaxial growth of composite scintillators based on Tb3Al5O12 : Ce single crystalline films and Gd3Al2.5Ga2.5O12 : Ce crystal substrates-Reference-Cited by-同舟云学术

Epitaxial growth of composite scintillators based on Tb3Al5O12 : Ce single crystalline films and Gd3Al2.5Ga2.5O12 : Ce crystal substrates

Published:2018 Issue:28 Volume:20 Page:3994-4002
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Witkiewicz-Lukaszek S.¹²³⁴⁵,Gorbenko V.¹²³⁴,Zorenko T.¹²³⁴,Paprocki K.¹²³⁴,Sidletskiy O.⁶⁷⁸⁹,Fedorov A.¹⁰⁷¹¹⁹,Kucerkova R.¹¹²¹³¹⁴,Mares J. A.¹¹²¹³¹⁴,Nikl M.¹¹²¹³¹⁴,Zorenko Yu.¹²³⁴^ORCID

Affiliation:

1. Institute of Physics

2. Kazimierz Wielki University in Bydgoszcz

3. 85090 Bydgoszcz

4. Poland

5. Faculty of Technical Physics

6. Institute for Scintillation Materials

7. National Academy of Sciences of Ukraine

8. 61001 Kharkiv

9. Ukraine

10. SSI Institute for Single Crystals

11. 61178 Kharkiv

12. Academy of Sciences of Czech Republic

13. 16200 Prague

14. Czech Republic

Abstract

The composite scintillators based on the single crystalline films of TbAG : Ce garnet and GAGG : Ce crystal substrates was developed using the LPE growth method for simultaneous registration of α-particles and γ-quanta in mixed ionizing fluxes.

Funder

Narodowe Centrum Nauki

Grantová Agentura České Republiky

Ministerstvo Školství, Mládeže a Tělovýchovy

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CE/C8CE00536B

Reference35 articles.

1. Epitaxial structures of garnets as scintillation detectors of ionizing radiation