Bilayer BaSnO3 thin film transistors on silicon substrates-Reference-Cited by-同舟云学术

Bilayer BaSnO3 thin film transistors on silicon substrates

Published:2020 Issue:15 Volume:8 Page:5231-5238
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Du Wenhan¹²³⁴⁵^ORCID,Nguyen Anh Chien⁵⁶⁷,John Rohit Abraham⁵⁶⁷,Yang Jing Jing¹²³⁴,Kulkarni Mohit Rameshchandra⁵⁶⁷,López-Mena Edgar R.⁸⁹¹⁰¹¹¹²,Nirmal Amoolya⁵⁶⁷,Mathews Nripan⁵⁶⁷¹³⁶^ORCID

Affiliation:

1. School of Photoelectric Engineering

2. Changzhou Institute of Technology

3. Changzhou

4. China

5. School of Materials Science and Engineering

6. Nanyang Technological University

7. Singapore

8. Tecnologico de Monterrey

9. Escuela de Ingenieriay Ciencias

10. Campus Monterrey

11. 64849 Monterrey

12. Mexico

13. Energy Research Institute@NTU (ERI@N)

Abstract

Barium tin oxide BaSnO₃ (BSO) is a novel wide-bandgap semiconducting material with high electron mobility and is considered as a promising alternative to indium-containing amorphous oxide semiconductors.

Funder

National Natural Science Foundation of China

Six Talent Peaks Project in Jiangsu Province

Ministry of Education - Singapore

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/C9TC04815D

Reference37 articles.

1. Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature