Atomic level termination for passivation and functionalisation of silicon surfaces
Author:
Affiliation:
1. School of Engineering
2. University of Warwick
3. Coventry
4. UK
5. Research School of Engineering
6. Australian National University
7. Canberra
8. Australia
9. Department of Physics
Abstract
The termination of silicon surfaces is studied from the nanometre to the centimetre scale, with differences in behaviour between hydrogen and fluorine terminated surfaces persisting after some subsequent surface passivation treatments.
Funder
Engineering and Physical Sciences Research Council
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR03860A
Reference39 articles.
1. The Evolution of Silicon Wafer Cleaning Technology
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