Atomic level termination for passivation and functionalisation of silicon surfaces-Reference-Cited by-同舟云学术

Atomic level termination for passivation and functionalisation of silicon surfaces

Published:2020 Issue:33 Volume:12 Page:17332-17341
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Grant Nicholas E.¹²³⁴^ORCID,Pointon Alex I.¹²³⁴,Jefferies Richard¹²³⁴,Hiller Daniel⁵⁶⁷⁸^ORCID,Han Yisong⁹²³⁴,Beanland Richard⁹²³⁴,Walker Marc⁹²³⁴^ORCID,Murphy John D.¹²³⁴^ORCID

Affiliation:

1. School of Engineering

2. University of Warwick

3. Coventry

4. UK

5. Research School of Engineering

6. Australian National University

7. Canberra

8. Australia

9. Department of Physics

Abstract

The termination of silicon surfaces is studied from the nanometre to the centimetre scale, with differences in behaviour between hydrogen and fluorine terminated surfaces persisting after some subsequent surface passivation treatments.

Funder

Engineering and Physical Sciences Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR03860A

Reference39 articles.

1. The Evolution of Silicon Wafer Cleaning Technology

2. Characterization of silicon surface preparation processes for advanced gate dielectrics

3. DNA Attachment and Hybridization at the Silicon (100) Surface