Reduced hydrogen diffusion in strained amorphous SiO2: understanding ageing in MOSFET devices-Reference-Cited by-同舟云学术

Reduced hydrogen diffusion in strained amorphous SiO2: understanding ageing in MOSFET devices

Published:2016 Issue:34 Volume:4 Page:8104-8110
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Sheikholeslam S. Arash¹²³⁴,Manzano Hegoi⁵⁶⁷⁸⁹,Grecu Cristian¹²³⁴,Ivanov André¹²³⁴

Affiliation:

1. Department of Electrical and Computer Engineering

2. the University of British Columbia

3. Vancouver

4. Canada

5. Department of Condensed Matter Physics

6. University of the Basque Country UPV/EHU

7. Barrio Sarriena s/n

8. Bizkaia

9. Spain

Abstract

Hydrogen diffusion activation energy in amorphous silicon dioxide is reduced by straining the material, which can reduce aging of MOSFETs.

Funder

Silicon Valley Community Foundation

Natural Sciences and Engineering Research Council of Canada

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TC/C6TC02647H

Reference49 articles.

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