Investigation of nodal line spin-gapless semiconductors using first-principles calculations-Reference-Cited by-同舟云学术

Investigation of nodal line spin-gapless semiconductors using first-principles calculations

Published:2022 Issue:17 Volume:10 Page:6530-6545
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Ding Guangqian¹^ORCID,Wang Jianhuan²^ORCID,Chen Hong²^ORCID,Zhang Xiaoming³^ORCID,Wang Xiaotian²^ORCID

Affiliation:

1. School of Science, Chongqing University of Posts and Telecommunications, Chongqing, 400065, China

2. School of Physical Science and Technology, Southwest University, Chongqing 400715, China

3. School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China

Abstract

Nodal line spin-gapless semiconductors (NLSGSs) are a new type of topological spintronic material with possible high Curie temperature, 100% spin polarization, high carrier mobility, gapless nodal line states at the Fermi level in one spin channel, and spin-polarized drumhead-like surface states.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Chongqing

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D2TC00305H

Reference188 articles.

1. Zero-gap materials for future spintronics, electronics and optics

2. Proposal for a New Class of Materials: Spin Gapless Semiconductors