Vector piezoelectric response and ferroelectric domain formation in Hf0.5Zr0.5O2 films-Reference-Cited by-同舟云学术

Vector piezoelectric response and ferroelectric domain formation in Hf_0.5Zr_0.5O₂ films

Published:2023 Issue:22 Volume:11 Page:7219-7226
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Tan Huan¹,Song Tingfeng¹,Dix Nico¹^ORCID,Sánchez Florencio¹^ORCID,Fina Ignasi¹^ORCID

Affiliation:

1. Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Barcelona, Spain

Abstract

The evolution of the vector piezoelectric response of Hf0.5Zr0.5O2 films on SrTiO3 substrates with different orientations shows the large and anisotropic in-plane piezoelectric response in films grown on SrTiO3(110).

Funder

Ministerio de Ciencia e Innovación

Generalitat de Catalunya

China Scholarship Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC01145C

Reference41 articles.

1. The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity

2. Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric Hf x Zr 1−x O 2 films

3. Ferroelectric phase transitions in nanoscale HfO 2 films enable giant pyroelectric energy conversion and highly efficient supercapacitors

4. Origin of Pyroelectricity in Ferroelectric HfO 2

5. Electric Auxetic Effect in Piezoelectrics

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3. Unravelling the nanoscale mechanism of polarization reversal in a Hf_0.5Zr_0.5O₂-based ferroelectric capacitor by vector piezoresponse force microscopy;Nanoscale;2024

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