Engineering the electronic and optoelectronic properties of InX (X = S, Se, Te) monolayers via strain-Reference-Cited by-同舟云学术

Engineering the electronic and optoelectronic properties of InX (X = S, Se, Te) monolayers via strain

Published:2017 Issue:6 Volume:19 Page:4855-4860
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Jin Hao¹²³⁴^ORCID,Li Jianwei¹²³⁴,Dai Ying⁵⁶⁷⁴^ORCID,Wei Yadong¹²³⁴

Affiliation:

1. College of Physics and Energy

2. Shenzhen University

3. Shenzhen 518060

4. People's Republic of China

5. School of Physics

6. State Key Laboratory of Crystal Materials

7. Jinan

Abstract

In this paper, we present a comprehensive study on the electronic and optoelectronic properties of indium monochalcogenide (InX with X = S, Se, Te) monolayers with and without strains.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2017/CP/C6CP08158D

Reference42 articles.

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4. Atomically ThinMoS2: A New Direct-Gap Semiconductor

5. Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2

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