Chemical vapor deposition merges MoS<sub>2</sub> grains into high-quality and centimeter-scale films on Si/SiO<sub>2</sub>-Reference-Cited by-同舟云学术

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Chemical vapor deposition merges MoS₂ grains into high-quality and centimeter-scale films on Si/SiO₂

Published:2022 Issue:10 Volume:12 Page:5990-5996
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Singh Mukesh¹,Ghosh Rapti²³⁴,Chen Yu-Siang³,Yen Zhi-Long¹,Hofmann Mario¹^ORCID,Chen Yang-Fang¹^ORCID,Hsieh Ya-Ping³⁴^ORCID

Affiliation:

1. Department of Physics, National Taiwan University, Taipei 106, Taiwan

2. Department of Physics, National Central University, Chung Li 320, Taiwan

3. Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 115, Taiwan

4. Molecular Science and Technology, Taiwan International Graduate Program, Academia Sinica, Taipei 115, Taiwan

Abstract

Control of the precursor transport through oxygen dosing yields increased MoS2 coverage and increased connectivity between crystalline MoS2 domains.

Funder

Ministry of Science and Technology, Taiwan

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/RA/D1RA06933K

Reference53 articles.

1. Bandgap tunability at single-layer molybdenum disulphide grain boundaries

2. Layer-controlled CVD growth of large-area two-dimensional MoS2films

3. Single-layer MoS2 transistors

4. Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure

5. Long-term stability of mechanically exfoliated MoS2 flakes

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