Uniform self-rectifying resistive random-access memory based on an MXene-TiO<sub>2</sub> Schottky junction-Reference-Cited by-同舟云学术

Uniform self-rectifying resistive random-access memory based on an MXene-TiO₂ Schottky junction

Published:2022 Issue:23 Volume:4 Page:5062-5069
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Zang Chao¹²,Li Bo¹²,Sun Yun¹²,Feng Shun¹³,Wang Xin-Zhe¹²,Wang Xiaohui¹²^ORCID,Sun Dong-Ming¹²^ORCID

Affiliation:

1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China

2. School of Materials Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, China

3. School of Physical Science and Technology, ShanghaiTech University, 393 Huaxiazhong Road, Shanghai, 200031, China

Abstract

Uniform self-rectifying RRAMs have been realized using a MXene-TiO2 Schottky junction based on the field-induced modulation of Schottky barrier.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NA/D2NA00281G

Reference60 articles.

1. Physics of Semiconductor Devices

2. Electrical transport across Au/Nb:SrTiO3 Schottky interface with different Nb doping

3. Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures

4. High-Performance Programmable Memory Devices Based on Co-Doped BaTiO3

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