Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep02482.pdf
Reference31 articles.
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5. Yan, Z., Guo, Y., Zhang, G. & Liu, J. M. High-Performance Programmable Memory Devices Based on Co-Doped BaTiO3 . Adv. Mater. 23, 1351–1355 (2011).
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