Substituted (P, As, Sb, S and Se) two-dimensional Bi<sub>2</sub>Te<sub>3</sub> monolayer under stress at high temperature: achieving high thermoelectric performance-Reference-Cited by-同舟云学术

Substituted (P, As, Sb, S and Se) two-dimensional Bi₂Te₃ monolayer under stress at high temperature: achieving high thermoelectric performance

Published:2023 Issue:28 Volume:47 Page:13309-13319
ISSN:1144-0546
Container-title:New Journal of Chemistry
language:en
Short-container-title:New J. Chem.

Author:

Li Ting¹,Pu Jie¹,Yu Tianwen¹,Hu Ziyu¹^ORCID,Shao Xiaohong¹

Affiliation:

1. College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing, 100029, People's Republic of China

Abstract

The group-VA (X = P, As, Sb)-substituted Bi2Te3 alloys of BiPTe3, BiSbTe3 and BiAsTe3 are promising candidates for thermoelectric applications near room temperature, and compressive strain can effectively improve the ZT value of the n-type structure.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry,Catalysis

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NJ/D3NJ01566A

Reference42 articles.

1. Convergence of electronic bands for high performance bulk thermoelectrics

2. Cooling, Heating, Generating Power, and Recovering Waste Heat with Thermoelectric Systems

3. Thermodynamic Routes to Ultralow Thermal Conductivity and High Thermoelectric Performance

4. High Thermoelectric Performance of p-Type SnTe via a Synergistic Band Engineering and Nanostructuring Approach

5. Realized high power factor and thermoelectric performance in Cu3SbSe4

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