Anomalous Hall effect in Nd-doped Bi1.1Sb0.9STe2 topological insulator single crystals-Reference-Cited by-同舟云学术

Anomalous Hall effect in Nd-doped Bi_1.1Sb_0.9STe₂ topological insulator single crystals

Published:2024 Issue:3 Volume:26 Page:2638-2645
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Chen Lei¹^ORCID,Zhao Weiyao²,Xing Kaijian³,You Mengyun⁴,Wang Xiaolin⁴^ORCID,Zheng Ren-Kui¹^ORCID

Affiliation:

1. School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China

2. Department of Materials Science & Engineering, and ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Clayton, VIC 3800, Australia

3. School of Physics & Astronomy, Monash University, Clayton, VIC 3800, Australia

4. Institute for Superconducting and Electronic Materials, and ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Innovation Campus, University of Wollongong, NSW 2500, Australia

Abstract

Ferromagnetic dopants in a 3D topological insulator will open a gap at the surface Dirac cone, which is critical to achieve quantum anomalous Hall effect.

Funder

Bureau of Education of Guangzhou Municipality

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province

Centre of Excellence in Future Low-Energy Electronics Technologies, Australian Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CP/D3CP05850F

Reference53 articles.

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