Geometrical design of a crystal growth system guided by a machine learning algorithm
Author:
Affiliation:
1. Institute of Materials and Systems for Sustainability (IMaSS)
2. Nagoya University
3. Nagoya 464-8603
4. Japan
5. Graduate School of Engineering
6. Center for Advanced Intelligence Project
Abstract
This study proposes a new high-speed method for designing crystal growth systems. It is capable of optimizing large numbers of parameters simultaneously which is difficult for traditional experimental and computational techniques.
Funder
Japan Society for the Promotion of Science
New Energy and Industrial Technology Development Organization
RIKEN
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2021/CE/D1CE00106J
Reference41 articles.
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2. G. Müller , J.-J.Métois and P.Rudolph , Crystal Growth – From Fundamentals to Technology , Elsevier , Amsterdam , 2004
3. Materials informatics
4. Modeling and simulation of sublimation growth of SiC bulk single crystals
5. Modeling of the Growth Rate during Top Seeded Solution Growth of SiC Using Pure Silicon as a Solvent
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