Universal solution-processed high-k amorphous oxide dielectrics for high-performance organic thin film transistors-Reference-Cited by-同舟云学术

Universal solution-processed high-k amorphous oxide dielectrics for high-performance organic thin film transistors

Published:2014 Issue:29 Volume:4 Page:14890-14895
ISSN:2046-2069
Container-title:RSC Adv.
language:en
Short-container-title:RSC Adv.

Author:

Zhao Xurong¹²³,Wang Sumei¹²³,Li Aiju¹²³,Ouyang Jun¹²³,Xia Guodong⁴⁵⁶,Zhou Ji⁷⁸⁹

Affiliation:

1. Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education)

2. Shandong University

3. Jinan 250061, China

4. Department of Material and Engineering

5. Qilu University of Technology

6. Jinan 250353, China

7. State Key Laboratory of New Ceramic and Fine Processing

8. Tsinghua University

9. Beijing, China

Abstract

Solution-processed high-k ZrTiO_x dielectric films achieve a k value and capacitance of 53 and 467 nF cm⁻², and a low leakage current of 4 × 10⁻⁸ A cm⁻² with polymer modification. High-performance organic thin film transistors with a carrier mobility of 0.58 cm² V⁻¹ s⁻¹, and a low operating voltage of 6 V were realized with ZrTiO_x dielectric films.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/RA/C4RA00633J

Reference28 articles.

1. Experimental Techniques for the Fabrication and Characterization of Organic Thin Films for Field-Effect Transistors

2. Low-Voltage, Low-Power, Organic Light-Emitting Transistors for Active Matrix Displays

3. Semiconducting π-Conjugated Systems in Field-Effect Transistors: A Material Odyssey of Organic Electronics

4. Organic Semiconductors in Organic Thin-Film Transistor-Based Chemical and Biological Sensors

5. High-k Organic, Inorganic, and Hybrid Dielectrics for Low-Voltage Organic Field-Effect Transistors

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