High Performance Flexible Organic Field-Effect Transistors with Barium Strontium Titanate Gate Dielectric Deposited at Room Temperature
Author:
Affiliation:
1. Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Jodhpur, Rajasthan 342037, India
2. Department of Electronics and Communication Engineering, Malviya National Institute of Technology, Jaipur, Rajasthan 302017, India
Funder
Ministry of Electronics and Information technology
Department of Science and Technology, Ministry of Science and Technology
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00779
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