Abnormal vibrational anisotropy and thermal properties of a two-dimensional GeAs semiconductor-Reference-Cited by-同舟云学术

Abnormal vibrational anisotropy and thermal properties of a two-dimensional GeAs semiconductor

Published:2023 Issue:5 Volume:25 Page:3745-3751
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Liu Yucheng¹^ORCID,Yang Shuai¹,Sui Fengrui¹,Qi Ruijuan¹²,Dong Shangwei¹,Yang Pingxiong¹,Yue Fangyu¹

Affiliation:

1. Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai 200062, China

2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information, Chinese Academy of Sciences, Shanghai 200050, China

Abstract

The polarization-dependent Raman shifts in 2D GeAs also evolve periodically in different symmetries, and the temperature-dependent Raman intensities can give a uniform constant, based on which the thermal-related key parameters can be derived.

Funder

National Natural Science Foundation of China

Ministry of Science and Technology of the People's Republic of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CP/D2CP05264D

Reference31 articles.

1. High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors

2. Two-dimensional GeAs with a visible range band gap