Fabrication of a 2 inch free standing porous GaN crystal film and application in the growth of relaxed crack-free thick GaN-Reference-Cited by-同舟云学术

Fabrication of a 2 inch free standing porous GaN crystal film and application in the growth of relaxed crack-free thick GaN

Published:2021 Issue:41 Volume:23 Page:7245-7252
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Liu Lei¹,Yu Ruixian¹,Wang Guodong¹,Xu Mingsheng¹,Wang Shouzhi¹,Xiao Hongdi²^ORCID,Hu Xiaobo¹,Zhang Lei¹^ORCID,Xu Xiangang¹

Affiliation:

1. State Key Laboratory of Crystal Material, Shandong University, Jinan, 250100, PR China

2. School of Microelectronics, Shandong University, Jinan, 250101, PR China

Abstract

This paper describes the fabrication of a 2 inch free standing porous GaN crystal film and the application in the growth of relaxed crack-free thick GaN.

Funder

National Natural Science Foundation of China

Key Technology Research and Development Program of Shandong

Shandong University

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/CE/D1CE01032H

Reference46 articles.

1. Recent progress of high-quality GaN substrates by HVPE method

2. Effects of edge dislocations and intentional Si doping on the electron mobility of n-type GaN films

3. Vertical GaN Schottky barrier diodes on Ge-doped free-standing GaN substrates

4. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

5. Over 80% power-added-efficiency GaN high-electron-mobility transistors on free-standing GaN substrates

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