Te/SnS<sub>2</sub> tunneling heterojunctions as high-performance photodetectors with superior self-powered properties-Reference-Cited by-同舟云学术

Te/SnS₂ tunneling heterojunctions as high-performance photodetectors with superior self-powered properties

Published:2022 Issue:20 Volume:4 Page:4296-4303
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Cao Xuanhao¹,Lei Zehong¹,Zhao Shuting¹,Tao Lili¹,Zheng Zhaoqiang¹^ORCID,Feng Xing¹^ORCID,Li Jingbo²,Zhao Yu¹^ORCID

Affiliation:

1. Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology, Guangzhou 510006, China

2. Guangdong Key Lab of Chip and Integration Technology, Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China

Abstract

The Te/SnS2 tunneling heterojunctions possess interesting type-III band alignment and reverse rectification feature, which can work as high-performance photodetector with excellent self-powered performance.

Funder

National Natural Science Foundation of China

Guangdong Provincial Pearl River Talents Program

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NA/D2NA00507G

Reference54 articles.

1. 2D materials and van der Waals heterostructures

2. Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges