Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures-Reference-Cited by-同舟云学术

Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures

Published:2015 Issue:47 Volume:5 Page:37881-37886
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Cao Duo¹²³⁴⁵,Cheng Xinhong¹²³⁴⁵,Xie Ya-Hong⁶⁷⁸⁹,Zheng Li¹²³⁴⁵,Wang Zhongjian¹²³⁴⁵,Yu Xinke⁶⁷⁸⁹,Wang Jia⁶⁷⁸⁹,Shen Dashen¹⁰¹¹¹²⁹,Yu Yuehui¹²³⁴⁵

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics

2. SIMIT

3. Chinese Academy of Sciences

4. Shanghai 200050

5. P. R. China

6. Department of Materials Science and Engineering

7. University of California

8. Los Angeles

9. USA

10. Department of Electrical and Computer Engineering

11. University of Alabama in Huntsville

12. Huntsville

Abstract

AlN films are grown on AlGaN/GaN by PEALD. High-temperature annealing promotes complete nitridation of AlN film, and causes AlN to form a semiconductor-like structure.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/RA/C5RA04728E

Reference28 articles.

1. Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures

2. First Principles Prediction of the Gas-Phase Precursors for AlN Sublimation Growth

3. Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition

4. Temperature effect on the electronic structure of AlN

5. Deposition and characterization of reactive magnetron sputtered aluminum nitride thin films for film bulk acoustic wave resonator

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