Room temperature ferromagnetism in (Ga1−xMnx)2O3 epitaxial thin films

Author:

Guo Daoyou12345,Wu Zhenping12345,An Yuehua12345,Li Xiaojiang67894,Guo Xuncai12345,Chu Xulong12345,Sun Changlong12345,Lei Ming12345,Li Linghong10111213,Cao Lixin141516174,Li Peigang123418,Tang Weihua12345

Affiliation:

1. School of Science

2. Beijing University of Posts and Telecommunications

3. Beijing 100876

4. China

5. State Key Laboratory of Information Photonics and Optical Communications

6. State Key Laboratory of Functional Materials for Informatics

7. Shanghai Institute of Microsystem and Information Technology

8. Chinese Academy of Sciences

9. Shanghai 200050

10. Department of Physics

11. The State University of New York at Potsdam

12. Potsdam

13. USA

14. Beijing National Laboratory for Condensed Matter Physics

15. Institute of Physics

16. Chinese Academy of Science

17. Beijing 100190

18. Center for Optoelectronics Materials and Devices

Abstract

Mn-doped monoclinic β-(Ga1−xMnx)2O3 thin films were epitaxially grown on α-Al2O3 (0001) substrates by alternately depositing Ga2O3 and Mn layers using the laser molecular beam epitaxy technique.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

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