Room temperature ferromagnetism in (Ga1−xMnx)2O3 epitaxial thin films-Reference-Cited by-同舟云学术

Room temperature ferromagnetism in (Ga1−xMnx)2O3 epitaxial thin films

Published:2015 Issue:8 Volume:3 Page:1830-1834
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Guo Daoyou¹²³⁴⁵,Wu Zhenping¹²³⁴⁵,An Yuehua¹²³⁴⁵,Li Xiaojiang⁶⁷⁸⁹⁴,Guo Xuncai¹²³⁴⁵,Chu Xulong¹²³⁴⁵,Sun Changlong¹²³⁴⁵,Lei Ming¹²³⁴⁵,Li Linghong¹⁰¹¹¹²¹³,Cao Lixin¹⁴¹⁵¹⁶¹⁷⁴,Li Peigang¹²³⁴¹⁸,Tang Weihua¹²³⁴⁵

Affiliation:

1. School of Science

2. Beijing University of Posts and Telecommunications

3. Beijing 100876

4. China

5. State Key Laboratory of Information Photonics and Optical Communications

6. State Key Laboratory of Functional Materials for Informatics

7. Shanghai Institute of Microsystem and Information Technology

8. Chinese Academy of Sciences

9. Shanghai 200050

10. Department of Physics

11. The State University of New York at Potsdam

12. Potsdam

13. USA

14. Beijing National Laboratory for Condensed Matter Physics

15. Institute of Physics

16. Chinese Academy of Science

17. Beijing 100190

18. Center for Optoelectronics Materials and Devices

Abstract

Mn-doped monoclinic β-(Ga_1−xMn_x)₂O₃ thin films were epitaxially grown on α-Al₂O₃ (0001) substrates by alternately depositing Ga₂O₃ and Mn layers using the laser molecular beam epitaxy technique.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C4TC02833C

Reference35 articles.

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