Tunable electronic and optical properties of a BAs/As heterostructure by vertical strain and external electric field
Author:
Affiliation:
1. Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering
2. Changsha University of Science and Technology
3. Changsha 410114
4. China
Abstract
The CBM (VBM) of the heterostructure is mainly contributed by the BAs (arsenene), which will favor the separation of photogenerated electron–hole pairs.
Funder
National Natural Science Foundation of China
Education Department of Hunan Province
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2021/RA/D1RA03606H
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