Study of a charge transition-driven resistive switching mechanism in TiO<sub>2</sub>-based random access memory <i>via</i> density functional theory-Reference-Cited by-同舟云学术

Study of a charge transition-driven resistive switching mechanism in TiO₂-based random access memory via density functional theory

Published:2024 Issue:14 Volume:16 Page:6949-6960
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Jeong Taeyoung¹²^ORCID,Yeu In Won¹^ORCID,Ye Kun Hee¹²,Yoon Seungjae¹²^ORCID,Kim Dohyun¹²^ORCID,Hwang Cheol Seong²^ORCID,Choi Jung-Hae¹^ORCID

Affiliation:

1. Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Korea

2. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, Korea

Abstract

This study investigated changes in the oxidation state of oxygen vacancies and their kinetics within the conducting filament, establishing a crucial relationship to resistive random access memory (RRAM) switching behavior.

Funder

National Research Foundation of Korea

Korea Institute of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NR/D3NR06614B

Reference47 articles.

1. Filamentary TaO _x /HfO ₂ ReRAM Devices for Neural Networks Training with Analog In‐Memory Computing

2. Memristors for Energy-Efficient New Computing Paradigms

3. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

4. Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films

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