Hysteresis-reversible MoS2 transistor-Reference-Cited by-同舟云学术

Hysteresis-reversible MoS2 transistor

Published:2021 Issue:27 Volume:45 Page:12033-12040
ISSN:1144-0546
Container-title:New Journal of Chemistry
language:en
Short-container-title:New J. Chem.

Author:

Cao Banglin¹²³⁴,Wang Zegao¹²³⁴,Xiong Xuya⁵⁶⁷⁸,Gao Libin⁹¹⁰¹¹⁴,Li Jiheng¹²¹³¹⁴⁴,Dong Mingdong⁵⁶⁷⁸^ORCID

Affiliation:

1. College of Materials Science and Engineering

2. Sichuan University

3. Chengdu 610065

4. China

5. Interdisciplinary Nanoscience Center

6. Aarhus University

7. Aarhus 8000

8. Denmark

9. Colloge of Electronic Science and Engineering

10. University of Electronic Science and Technology of China

11. Chengdu-610054

12. State Key Laboratory for Advanced Metals & Materials

13. University of Science & Technology Beijing

14. Beijing

Abstract

Sulfur vacancy dominant hysteresis in MoS₂ transistors is observed. By decorating with Pt, the hysteresis behavior could switch from sulfur vacancy dominant to interfacial dominant, thereby realizing a hysteresis-reversible MoS₂ transistor.

Funder

National Natural Science Foundation of China

Sichuan Province Science and Technology Support Program

Ministry of Education of the People's Republic of China

State Key Laboratory of Advanced Technologies for Comprehensive Utilization of Platinum Metals

Danmarks Grundforskningsfond

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry,Catalysis

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NJ/D1NJ01267C

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