Influence of temperature and oxygen on the growth of large-scale SiC nanowires-Reference-Cited by-同舟云学术

Influence of temperature and oxygen on the growth of large-scale SiC nanowires

Published:2019 Issue:11 Volume:21 Page:1801-1808
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Lin Hongjiao¹²³⁴^ORCID,Li Hejun¹²³⁴,Wang Tiyuan¹²³⁴,Shen Qingliang¹²³⁴,Shi Xiaohong¹²³⁴,Feng Tao⁵⁶²⁷⁸

Affiliation:

1. State Key Laboratory of Solidification Processing

2. Northwestern Polytechnical University

3. Xi'an 710072

4. China

5. School of Mechanics

6. Civil Engineering & Architecture

7. Xi'an

8. P. R. China

Abstract

This paper examines the influence of temperature and oxygen on the growth of large-scale silicon carbide nanowires by using a combination of sol–gel impregnation and carbothermal reduction methods.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CE/C8CE01844H

Reference50 articles.

1. Morphology Control in the Vapor−Liquid−Solid Growth of SiC Nanowires

2. Fracture Strain of SiC Nanowires and Direct Evidence of Electron-Beam Induced Amorphisation in the Strained Nanowires

3. First principles study about Fe adsorption on planar SiC nanostructures: Monolayer and nanoribbon

4. Size-dependent surface stress, surface stiffness, and Young’s modulus of hexagonal prism [111] β-SiC nanowires

5. Large-scale synthesis and photoluminescence properties of hexagonal-shaped SiC nanowires

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