Electrical performance of La-doped In2O3 thin-film transistors prepared using a solution method for low-voltage driving
Author:
Affiliation:
1. Xinjiang Key Laboratory of Solid State Physics and Devices, Xinjiang University, Urumqi 830046, China
2. The School of Physics Science and Technology, Xinjiang University, Urumqi 830046, China
Abstract
Funder
National Natural Science Foundation of China
Natural Science Foundation of Xinjiang Uygur Autonomous Region
Publisher
Royal Society of Chemistry (RSC)
Link
http://pubs.rsc.org/en/content/articlepdf/2024/RA/D4RA01409J
Reference40 articles.
1. Investigation on the electrical performances and stability of W-doped ZnO thin-film transistors
2. Indium Oxide Thin-Film Transistors Fabricated by RF Sputtering at Room Temperature
3. Optimization of process parameters for the electrical properties in Ga-doped ZnO thin films prepared by r.f. magnetron sputtering
4. Effects of Nitrogen and Hydrogen Codoping on the Electrical Performance and Reliability of InGaZnO Thin-Film Transistors
5. Review of recent advances in flexible oxide semiconductor thin-film transistors
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