Giant magnetoresistance and tunneling electroresistance in multiferroic tunnel junctions with 2D ferroelectrics

Author:

Chen Yancong123ORCID,Tang Zhiyuan123,Dai Minzhi123,Luo Xin123ORCID,Zheng Yue123ORCID

Affiliation:

1. Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China

2. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China

3. Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China

Abstract

Giant magnetoresistance and tunneling electroresistance are achieved in Ni/2L In2Se3/BN/Ni multiferroic tunnel junctions with eight resistance states.

Funder

National Natural Science Foundation of China-Guangdong Joint Fund

Guangzhou Science and Technology Program key projects

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Sun Yat-sen University

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

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