Mechanical switching in ferroelectrics by shear stress and its implications on charged domain wall generation and vortex memory devices-Reference-Cited by-同舟云学术

Mechanical switching in ferroelectrics by shear stress and its implications on charged domain wall generation and vortex memory devices

Published:2018 Issue:8 Volume:8 Page:4434-4444
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Chen W. J.¹²³⁴⁵^ORCID,Yuan Shuai⁵⁶²³⁴,Ma L. L.⁵⁶²³⁴,Ji Ye¹²³⁴⁵,Wang Biao⁷²⁸⁴,Zheng Yue¹²³⁴⁵^ORCID

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies

2. Sun Yat-sen University

3. Guangzhou

4. China

5. Micro & Nano Physics and Mechanics Research Laboratory

6. School of Physics

7. Sino-French Institute of Nuclear Engineering and Technology

8. Zhuhai

Abstract

Combining thermodynamic calculation and phase-field simulation, we revealed that mechanical switching of polarization can be achieved in ferroelectric by shear stressviaa simple mechanism where the presence of flexoelectricity is not necessary.

Funder

National Natural Science Foundation of China

China Scholarship Council

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/RA/C7RA12233K

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