Structural reliability evaluation of low-k nanoporous dielectric interlayers integrated into microelectronic devices-Reference-Cited by-同舟云学术

Structural reliability evaluation of low-k nanoporous dielectric interlayers integrated into microelectronic devices

Published:2015 Issue:106 Volume:5 Page:87084-87089
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Heo Kyuyoung¹²³⁴⁵,Ree Brian J.¹²³⁴⁵,Choi Kyeung-Keun⁶⁷⁸⁹,Ree Moonhor¹²³⁴⁵

Affiliation:

1. Department of Chemistry

2. Division of Advanced Materials Science

3. Pohang Accelerator Laboratory

4. Polymer Research Institute

5. BK School of Molecular Science

6. National Institute for Nanomaterials Technology

7. Pohang University of Science & Technology

8. Pohang 790-784

9. Republic of Korea

Abstract

Structural reliability assessment on the integration of low-k nanoporous dielectrics into a multilayer structure, involving capping, chemical mechanical polishing, post-cleaning, and thermal annealing processes, was successfully demonstrated in a nondestructive manner.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/RA/C5RA16983F

Reference28 articles.

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2. Nano/Mesoporous Polymers Based Low-kDielectric Materials: A Review on Methods and Advances

3. Low Dielectric Constant Materials for ULSI Interconnects