Finely tuned digital memory modes and performances in diblock copolymer devices by well-defined lamellar structure formation and orientation control-Reference-Cited by-同舟云学术

Finely tuned digital memory modes and performances in diblock copolymer devices by well-defined lamellar structure formation and orientation control

Published:2016 Issue:10 Volume:4 Page:2017-2027
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wi Dongwoo¹²³⁴⁵,Kim Jonghyun¹²³⁴⁵,Lee Hoyeol¹²³⁴⁵,Kang Nam-Goo⁶⁷⁸⁹,Lee Jinseok¹²³⁴⁵,Kim Myung-Jin⁶⁷⁸⁹,Lee Jae-Suk⁶⁷⁸⁹,Ree Moonhor¹²³⁴⁵

Affiliation:

1. Division of Advanced Materials Science

2. Department of Chemistry

3. Pohang Accelerator Laboratory

4. Polymer Research Institute, and BK School of Molecular Science

5. Pohang University of Science & Technology

6. School of Materials Science and Engineering

7. Gwangju Institute of Science and Technology

8. Gwangju 500-712

9. Republic of Korea

Abstract

Block copolymers bearing carbazole moieties in thin films nicely demonstrated vertical or horizontal lamellar structure depending on the process condition. The vertical lamellar structure revealed permanent memory behavior, where the horizontal lamellar structure exhibited volatile memory behavior.

Funder

National Research Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TC/C5TC04342E

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